MOSFET N-CH 75V 80A TO220-3
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75 V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6.2mOhm @ 73A, 10V |
Vgs(th) (Max) @ Id: | 3.8V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs: | 55 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3840 pF @ 37.5 V |
FET Feature: | - |
Power Dissipation (Max): | 136W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQPF6N60CRochester Electronics |
MOSFET N-CH 600V 5.5A TO220F |
|
AON6576Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 26A/32A 8DFN |
|
STP75N75F4STMicroelectronics |
MOSFET N-CH 75V 78A TO220 |
|
PMPB85ENEAXNexperia |
MOSFET N-CH 60V 3A DFN2020MD-6 |
|
TSM061NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 88A 8PDFN |
|
IPB65R099C6ATMA1Rochester Electronics |
IPB65R099 - OPTLMOS N-CHANNEL |
|
RTF010P02TLROHM Semiconductor |
MOSFET P-CH 20V 1A TUMT3 |
|
IPD50N04S4L08ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 50A TO252-3 |
|
BSH205G2215Rochester Electronics |
P-CHANNEL MOSFET |
|
IPI126N10N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NDF08N60ZGRochester Electronics |
MOSFET N-CH 600V 8.4A TO220FP |
|
DMP6023LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 6.6A 8SO |
|
IXFT50N30Q3Wickmann / Littelfuse |
MOSFET N-CH 300V 50A TO268 |