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FQPF6N60C

FQPF6N60C

MOSFET N-CH 600V 5.5A TO220F

FQPF6N60C

FQPF6N60C

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Part No :

FQPF6N60C

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 5.5A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15642 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FQPF6N60C PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:810 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF6N60C is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF6N60C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF6N60C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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