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IPD50N04S4L08ATMA1

IPD50N04S4L08ATMA1

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IPD50N04S4L08ATMA1

IPD50N04S4L08ATMA1

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Part No :

IPD50N04S4L08ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 50A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11238 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPD50N04S4L08ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.2V @ 17µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:2340 pF @ 25 V
FET Feature:-
Power Dissipation (Max):46W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N04S4L08ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD50N04S4L08ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD50N04S4L08ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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