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RQ1E100XNTR

RQ1E100XNTR

MOSFET N-CH 30V 10A TSMT8

RQ1E100XNTR

RQ1E100XNTR

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Part No :

RQ1E100XNTR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 10A TSMT8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
125812 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
RQ1E100XNTR PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:12.7 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):550mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSMT8
Package / Case:8-SMD, Flat Lead
RQ1E100XNTR is available at GangBo-ic.com, Please review product page below for detailed information, including RQ1E100XNTR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQ1E100XNTR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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