MOSFET N-CH 100V 4.3A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 540mOhm @ 2.6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.3 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 180 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252AA) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFS7787PBFRochester Electronics |
MOSFET N-CH 75V 76A D2PAK |
|
NTE490NTE Electronics, Inc. |
MOSFET N-CHANNEL 60V 500MA AXIAL |
|
PMT29EN,115Rochester Electronics |
MOSFET N-CH 30V 6A SOT223 |
|
IPD50N06S214ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 50A TO252-31 |
|
IPD30N06S4L23ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 30A TO252-31 |
|
FDS4070N7Rochester Electronics |
MOSFET N-CH 40V 15.3A 8SO |
|
IXTN17N120LWickmann / Littelfuse |
MOSFET N-CH 1200V 15A SOT-227B |
|
IRF3205ZLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO262 |
|
FQP5N50CRochester Electronics |
MOSFET N-CH 500V 5A TO220-3 |
|
IPP80P04P4L08AKSA1Rochester Electronics |
OPTIMOS POWER-TRANSISTOR |
|
IRFR422Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFT50N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 50A TO268 |
|
IPD65R660CFDAATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO252-3 |