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IPP80P04P4L08AKSA1

IPP80P04P4L08AKSA1

OPTIMOS POWER-TRANSISTOR

IPP80P04P4L08AKSA1

IPP80P04P4L08AKSA1

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Part No :

IPP80P04P4L08AKSA1

Manufacturer
Rochester Electronics
Description
OPTIMOS POWER-TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14736 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPP80P04P4L08AKSA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:5.43 pF @ 25 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
IPP80P04P4L08AKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP80P04P4L08AKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP80P04P4L08AKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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