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IPP80P04P4L08AKSA1

IPP80P04P4L08AKSA1

OPTIMOS POWER-TRANSISTOR

IPP80P04P4L08AKSA1

IPP80P04P4L08AKSA1

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Part No :

IPP80P04P4L08AKSA1

Manufacturer
Rochester Electronics
Description
OPTIMOS POWER-TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14736 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 28 - Jul 02 2024
PDF
IPP80P04P4L08AKSA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:5.43 pF @ 25 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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