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IPD30N06S4L23ATMA2

IPD30N06S4L23ATMA2

MOSFET N-CH 60V 30A TO252-31

IPD30N06S4L23ATMA2

IPD30N06S4L23ATMA2

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Part No :

IPD30N06S4L23ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 30A TO252-31
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10314 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 10 - Jan 14 2025
PDF
IPD30N06S4L23ATMA2 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1560 pF @ 25 V
FET Feature:-
Power Dissipation (Max):36W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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