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IPA65R099C6XKSA1

IPA65R099C6XKSA1

MOSFET N-CH 650V 38A TO220

IPA65R099C6XKSA1

IPA65R099C6XKSA1

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Part No :

IPA65R099C6XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 38A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16151 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPA65R099C6XKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs:127 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.78 pF @ 100 V
FET Feature:-
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPA65R099C6XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA65R099C6XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA65R099C6XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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