662 DIAL 1 INX.25 IN CLEA
MOSFET N-CH 80V 2.8A DFN2020MD-6
KIT POT TRIMMER 50-2M OHM 75PCS
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 105mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14.9 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 504 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta), 15.6W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN2020MD-6 |
Package / Case: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRL6283MTRPBFRochester Electronics |
DIRECTFET N-CHANNEL POWER MOSFET |
|
SI2316BDS-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 4.5A SOT23-3 |
|
FDMA7632Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A 6MICROFET |
|
GA10JT12-263GeneSiC Semiconductor |
TRANS SJT 1200V 25A |
|
FDMS86183Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 51A 8PQFN |
|
ZXMN10A08E6TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.5A SOT26 |
|
FDMS86310Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 17A/50A 8PQFN |
|
FQP7N80Rochester Electronics |
MOSFET N-CH 800V 6.6A TO220-3 |
|
IRL7472L1TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 375A DIRECTFET |
|
SUD35N10-26P-BE3Vishay / Siliconix |
MOSFET N-CH 100V 12A/35A DPAK |
|
ZXMN10A11GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.7A SOT223 |
|
IXFK94N50P2Wickmann / Littelfuse |
MOSFET N-CH 500V 94A TO264AA |
|
IRFS4620TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 24A D2PAK |