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GA10JT12-263

GA10JT12-263

TRANS SJT 1200V 25A

GA10JT12-263

GA10JT12-263

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Part No :

GA10JT12-263

Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1200V 25A
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10170 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
GA10JT12-263 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:120mOhm @ 10A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:1403 pF @ 800 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:-
Package / Case:-
GA10JT12-263 is available at GangBo-ic.com, Please review product page below for detailed information, including GA10JT12-263 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for GA10JT12-263 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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