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FQD5N50CTM

FQD5N50CTM

MOSFET N-CH 500V 4A DPAK

FQD5N50CTM

FQD5N50CTM

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Part No :

FQD5N50CTM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 4A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19997 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 31 - Jan 04 2024
PDF
FQD5N50CTM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:625 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5N50CTM is available at GangBo-ic.com, Please review product page below for detailed information, including FQD5N50CTM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD5N50CTM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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