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FCU600N65S3R0

FCU600N65S3R0

MOSFET N-CH 650V 6A IPAK

FCU600N65S3R0

FCU600N65S3R0

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Part No :

FCU600N65S3R0

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 650V 6A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
35769000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FCU600N65S3R0 PDF
Type Description
Series:SuperFET® III
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:465 pF @ 400 V
FET Feature:-
Power Dissipation (Max):54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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