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PMT200EN,115

PMT200EN,115

MOSFET N-CH 100V 1.8A SOT223

PMT200EN,115

PMT200EN,115

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Part No :

PMT200EN,115

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 1.8A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
43000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:235mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:475 pF @ 80 V
FET Feature:-
Power Dissipation (Max):800mW (Ta), 8.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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