MOSFET N-CH 100V 10A DPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 185mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 5 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 440 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 48W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPB17N25S3100ATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 17A TO263-3 |
|
IXTP120P065TWickmann / Littelfuse |
MOSFET P-CH 65V 120A TO220AB |
|
R6507ENJTLROHM Semiconductor |
MOSFET N-CH 650V 7A LPTS |
|
SQ2351ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.2A SOT23-3 |
|
FCU7N60TURochester Electronics |
MOSFET N-CH 600V 7A IPAK |
|
DMTH4004SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO252-4L |
|
STFI6N62K3STMicroelectronics |
MOSFET N CH 620V 5.5A I2PAKFP |
|
SQJ211ELP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 100V 33.6A PPAK SO-8 |
|
IPL60R285P7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13A 4VSON |
|
STF11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A TO220FP |
|
BSL802SNL6327HTSA1Rochester Electronics |
MOSFET N-CH 20V 7.5A TSOP-6 |
|
CPH6350-TL-ERochester Electronics |
MOSFET P-CH 30V 6A 6CPH |
|
IRF840LCVishay / Siliconix |
MOSFET N-CH 500V 8A TO220AB |