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SQJ211ELP-T1_GE3

SQJ211ELP-T1_GE3

MOSFET P-CH 100V 33.6A PPAK SO-8

SQJ211ELP-T1_GE3

SQJ211ELP-T1_GE3

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Part No :

SQJ211ELP-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 100V 33.6A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
284928 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:30mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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