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R6507ENJTL

R6507ENJTL

MOSFET N-CH 650V 7A LPTS

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R6507ENJTL

R6507ENJTL

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Part No :

R6507ENJTL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 650V 7A LPTS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10998 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:665mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 25 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LPTS
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
R6507ENJTL is available at GangBo-ic.com, Please review product page below for detailed information, including R6507ENJTL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6507ENJTL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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