MOSFET P-CH 100V 1A SOT23
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 800mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.2 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 388 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 770mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ZXMN10A25GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2.9A SOT223 |
|
FDP86363-F085Rochester Electronics |
MOSFET N-CH 80V 110A TO220-3 |
|
FQPF19N20TRochester Electronics |
11.8A, 200V, 0.15OHM, N CHANNEL |
|
BSB280N15NZ3GXUMA1Rochester Electronics |
MOSFET N-CH 150V 9A/30A 2WDSON |
|
IPP040N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 20A/80A TO220-3 |
|
IRF9520NPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 6.8A TO220AB |
|
SPB100N06S2-05Rochester Electronics |
MOSFET N-CH 55V 100A TO263-3 |
|
RM12N650LDRectron USA |
MOSFET N-CH 650V 11.5A TO252-2 |
|
2SK1285-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT6013JLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 39A ISOTOP |
|
NTHD4P02FT1Rochester Electronics |
MOSFET P-CH 20V 2.2A CHIPFET |
|
IRF5210STRLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 38A D2PAK |
|
NVMFS5C456NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 87A 5DFN |