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BSB280N15NZ3GXUMA1

BSB280N15NZ3GXUMA1

MOSFET N-CH 150V 9A/30A 2WDSON

19783

19783

TEST KIT SURFACE RESISTANCE

BSB280N15NZ3GXUMA1

BSB280N15NZ3GXUMA1

Image is for reference, please contact us to get the real picture

Part No :

BSB280N15NZ3GXUMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 150V 9A/30A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19080 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
BSB280N15NZ3GXUMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:28mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.6 pF @ 75 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 57W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
BSB280N15NZ3GXUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSB280N15NZ3GXUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSB280N15NZ3GXUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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