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FQPF19N20T

FQPF19N20T

11.8A, 200V, 0.15OHM, N CHANNEL

FQPF19N20T

FQPF19N20T

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Part No :

FQPF19N20T

Manufacturer
Rochester Electronics
Description
11.8A, 200V, 0.15OHM, N CHANNEL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
PDF
FQPF19N20T PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.6 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
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