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SI2304DS,215

SI2304DS,215

SMALL SIGNAL FIELD-EFFECT TRANSI

SI2304DS,215

SI2304DS,215

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Part No :

SI2304DS,215

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Catalog
Transistors - FETs, MOSFETs - Single
Availability
69336 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 07 - Jan 11 2025
PDF
SI2304DS,215 PDF
Type Description
Series:TrenchMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:117mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 10 V
FET Feature:-
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
SI2304DS,215 is available at GangBo-ic.com, Please review product page below for detailed information, including SI2304DS,215 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI2304DS,215 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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