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FCD2250N80Z

FCD2250N80Z

MOSFET N-CH 800V 2.6A DPAK

FCD2250N80Z

FCD2250N80Z

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Part No :

FCD2250N80Z

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 2.6A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
784578 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 07 - Jan 11 2025
PDF
FCD2250N80Z PDF
Type Description
Series:SuperFET® II
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.25Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:585 pF @ 100 V
FET Feature:-
Power Dissipation (Max):39W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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