MOSFET N-CH 650V 19A TO220-3
Type | Description |
---|---|
Series: | SuperFET® III |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 165mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1.9mA |
Gate Charge (Qg) (Max) @ Vgs: | 39 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 154W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NDD05N50Z-1GRochester Electronics |
MOSFET N-CH 500V 4.7A IPAK |
|
STL2N80K5STMicroelectronics |
MOSFET N-CH 800V 2A POWERFLAT |
|
AUIRFSA8409-7PIR (Infineon Technologies) |
MOSFET N-CH 40V 523A D2PAK |
|
IXTR140P10TWickmann / Littelfuse |
MOSFET P-CH 100V 110A ISOPLUS247 |
|
STB6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A D2PAK |
|
FQD1N60CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 1A DPAK |
|
IRFH5301TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 35A/100A PQFN |
|
IRF610SPBFVishay / Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
|
STL7LN65K5AGSTMicroelectronics |
MOSFET N-CH 650V 5A PWRFLAT VHV |
|
IPD65R380C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.6A TO252-3 |
|
FCD260N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 12A TO252 |
|
HUF76423S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF510PBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A TO220AB |