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FCP165N65S3

FCP165N65S3

MOSFET N-CH 650V 19A TO220-3

FCP165N65S3

FCP165N65S3

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Part No :

FCP165N65S3

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 650V 19A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11412 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
FCP165N65S3 PDF
Type Description
Series:SuperFET® III
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 400 V
FET Feature:-
Power Dissipation (Max):154W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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