MOSFET N-CH 30V 65A LFPAK33
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.5mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 13.6 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 817 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 51W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK33 |
Package / Case: | SOT-1210, 8-LFPAK33 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDC606PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 6A SUPERSOT6 |
|
IPW60R125CPRochester Electronics |
25A, 600V, 0.125OHM, N-CHANNEL M |
|
RQ5L020SNTLROHM Semiconductor |
MOSFET N-CH 60V 2A TSMT3 |
|
NTD70N03RRochester Electronics |
MOSFET N-CH 25V 10A/32A DPAK |
|
FCP650N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 10A TO220 |
|
BUK9514-55A,127Rochester Electronics |
PFET, 73A I(D), 55V, 0.015OHM, 1 |
|
FCPF165N65S3R0LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 19A TO220F-3 |
|
CSD19506KCSTexas Instruments |
MOSFET N-CH 80V 100A TO220-3 |
|
SI4114DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 20A 8SO |
|
BSC040N08NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TDSON |
|
DMT47M2SFVW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI3333 |
|
SIHG80N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 80A TO247AC |
|
R6024KNZ1C9ROHM Semiconductor |
MOSFET N-CHANNEL 600V 24A TO247 |