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FDC606P

FDC606P

MOSFET P-CH 12V 6A SUPERSOT6

FDC606P

FDC606P

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Part No :

FDC606P

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 12V 6A SUPERSOT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
64746 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FDC606P PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:26mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1699 pF @ 6 V
FET Feature:-
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
FDC606P is available at GangBo-ic.com, Please review product page below for detailed information, including FDC606P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDC606P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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