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FCP650N80Z

FCP650N80Z

MOSFET N-CH 800V 10A TO220

FCP650N80Z

FCP650N80Z

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Part No :

FCP650N80Z

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 10A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
6572400 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FCP650N80Z PDF
Type Description
Series:SuperFET® II
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1565 pF @ 100 V
FET Feature:-
Power Dissipation (Max):162W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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