MOSFET N-CH 650V 9A TO220
Type | Description |
---|---|
Series: | CoolMOS™ P7 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 360mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 555 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 22W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220 Full Pack |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDS6676Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TK6A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 5.5A TO220SIS |
|
IPI110N20N3GAKSA1Rochester Electronics |
MOSFET N-CH 200V 88A TO262-3 |
|
SSM3K2615R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 2A SOT23F |
|
IXFX21N100QWickmann / Littelfuse |
MOSFET N-CH 1000V 21A PLUS247-3 |
|
NP36N055HLE-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS9412Rochester Electronics |
MOSFET N-CH 30V 7.9A 8SOIC |
|
STD7N65M2STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
|
IRFH4234TRPBFRochester Electronics |
MOSFET N-CH 25V 22A PQFN |
|
IPU95R2K0P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 4A TO251-3 |
|
IPAW60R360P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO220 |
|
AOD423Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A/70A TO252 |
|
STD60NF55LT4STMicroelectronics |
MOSFET N-CH 55V 60A DPAK |