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IPAW60R360P7SXKSA1

IPAW60R360P7SXKSA1

MOSFET N-CH 650V 9A TO220

IPAW60R360P7SXKSA1

IPAW60R360P7SXKSA1

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Part No :

IPAW60R360P7SXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 9A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10426 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPAW60R360P7SXKSA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:555 pF @ 400 V
FET Feature:-
Power Dissipation (Max):22W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPAW60R360P7SXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPAW60R360P7SXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPAW60R360P7SXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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