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IPI110N20N3GAKSA1

IPI110N20N3GAKSA1

MOSFET N-CH 200V 88A TO262-3

IPI110N20N3GAKSA1

IPI110N20N3GAKSA1

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Part No :

IPI110N20N3GAKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 88A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11795 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
PDF
IPI110N20N3GAKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:88A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 88A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7.1 pF @ 100 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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