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IPU95R2K0P7AKMA1

IPU95R2K0P7AKMA1

MOSFET N-CH 950V 4A TO251-3

IPU95R2K0P7AKMA1

IPU95R2K0P7AKMA1

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Part No :

IPU95R2K0P7AKMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 950V 4A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
784178 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
PDF
IPU95R2K0P7AKMA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 400 V
FET Feature:-
Power Dissipation (Max):37W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IPU95R2K0P7AKMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPU95R2K0P7AKMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPU95R2K0P7AKMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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