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IRF610PBF

IRF610PBF

MOSFET N-CH 200V 3.3A TO220AB

IRF610PBF

IRF610PBF

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Part No :

IRF610PBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 3.3A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
604160 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
PDF
IRF610PBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
FET Feature:-
Power Dissipation (Max):36W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRF610PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF610PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF610PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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