MOSFET N-CH 1000V 4A TO263
Type | Description |
---|---|
Series: | HiPerFET™, PolarP2™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.3Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1456 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (IXFA) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSS123K-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 170MA SOT23 |
|
ZVP3306AZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 160MA TO92-3 |
|
FQPF8N80CYDTURochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 8 |
|
IPI45N06S4L08AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 45A TO262-3 |
|
STWA12N120K5STMicroelectronics |
MOSFET N-CH 1200V 12A TO247 |
|
FDD5690Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 30A TO252 |
|
BSP135L6906Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSO200P03SHXUMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 7.4A 8DSO |
|
SI3440DV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 1.2A 6TSOP |
|
TK10A60D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 10A TO220SIS |
|
FQP5P20Rochester Electronics |
MOSFET P-CH 200V 4.8A TO220-3 |
|
BUK78150-55A/CUFNexperia |
MOSFET N-CH 55V 5.5A SOT223 |
|
CSD17555Q5ARochester Electronics |
OXIDE SEMICONDUCTOR FET |