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FQPF8N80CYDTU

FQPF8N80CYDTU

POWER FIELD-EFFECT TRANSISTOR, 8

FQPF8N80CYDTU

FQPF8N80CYDTU

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Part No :

FQPF8N80CYDTU

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15600 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 01 - Feb 05 2025
PDF
FQPF8N80CYDTU PDF
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.55Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.05 pF @ 25 V
FET Feature:-
Power Dissipation (Max):59W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3 (Y-Forming)
Package / Case:TO-220-3 Full Pack, Formed Leads
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