MOSFET N-CH 150V 1.2A 6TSOP
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150 V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 375mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 1.14W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK10A60D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 10A TO220SIS |
|
FQP5P20Rochester Electronics |
MOSFET P-CH 200V 4.8A TO220-3 |
|
BUK78150-55A/CUFNexperia |
MOSFET N-CH 55V 5.5A SOT223 |
|
CSD17555Q5ARochester Electronics |
OXIDE SEMICONDUCTOR FET |
|
BUK9225-55A,118Nexperia |
MOSFET N-CH 55V 43A DPAK |
|
SI7611DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 18A PPAK1212-8 |
|
IXTA08N100D2HVWickmann / Littelfuse |
MOSFET N-CH 1000V 800MA TO263HV |
|
AOSP66923Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 12A 8SOIC |
|
EPC2031EPC |
GANFET NCH 60V 31A DIE |
|
SQ2348ES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 8A TO236 |
|
HRF3205_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR2307ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A DPAK |
|
IXFN48N60PWickmann / Littelfuse |
MOSFET N-CH 600V 40A SOT227B |