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IPP110N20NAAKSA1

IPP110N20NAAKSA1

MOSFET N-CH 200V 88A TO220-3

IPP110N20NAAKSA1

IPP110N20NAAKSA1

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Part No :

IPP110N20NAAKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 88A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10990 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
IPP110N20NAAKSA1 PDF
Type Description
Series:OptimWatt™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:88A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7100 pF @ 100 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP110N20NAAKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP110N20NAAKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP110N20NAAKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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