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IPS80R900P7AKMA1

IPS80R900P7AKMA1

MOSFET N-CH 800V 6A TO251-3

IPS80R900P7AKMA1

IPS80R900P7AKMA1

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Part No :

IPS80R900P7AKMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 6A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
803980 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 27 - Jan 31 2025
PDF
IPS80R900P7AKMA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 500 V
FET Feature:-
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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