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BSZ017NE2LS5IATMA1

BSZ017NE2LS5IATMA1

MOSFET N-CH 25V 27A/40A TSDSON

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BSZ017NE2LS5IATMA1

BSZ017NE2LS5IATMA1

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Part No :

BSZ017NE2LS5IATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 25V 27A/40A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13086 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
BSZ017NE2LS5IATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2 nF @ 12 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-FL
Package / Case:8-PowerTDFN
BSZ017NE2LS5IATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSZ017NE2LS5IATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSZ017NE2LS5IATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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