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SPD02N50C3BTMA1

SPD02N50C3BTMA1

MOSFET N-CH 500V 1.8A TO252

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SPD02N50C3BTMA1

SPD02N50C3BTMA1

Image is for reference, please contact us to get the real picture

Part No :

SPD02N50C3BTMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 1.8A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
175000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
SPD02N50C3BTMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 25 V
FET Feature:-
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-311
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
SPD02N50C3BTMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SPD02N50C3BTMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPD02N50C3BTMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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