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NTLJS3113PT1G

NTLJS3113PT1G

MOSFET P-CH 20V 3.5A 6WDFN

NTLJS3113PT1G

NTLJS3113PT1G

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Part No :

NTLJS3113PT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 3.5A 6WDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12238 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NTLJS3113PT1G PDF
Type Description
Series:µCool™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1329 pF @ 16 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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