MOSFET P-CH 60V 130MA SOT23-3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 130mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10Ohm @ 130mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 45 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 250mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM3J374R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 4A SOT23F |
|
NTLJS3113PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.5A 6WDFN |
|
SIS468DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK1212-8 |
|
HUFA76432S3STRochester Electronics |
MOSFET N-CH 60V 59A D2PAK |
|
BUK765R0-100E,118Nexperia |
MOSFET N-CH 100V 120A D2PAK |
|
AOWF4N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO262F |
|
TK40A10N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 40A TO220SIS |
|
GA20JT12-263GeneSiC Semiconductor |
TRANS SJT 1200V 45A D2PAK |
|
IPP230N06L3GXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT24M120B2Roving Networks / Microchip Technology |
MOSFET N-CH 1200V 24A T-MAX |
|
IRFD123PBFVishay / Siliconix |
MOSFET N-CH 100V 1.3A 4DIP |
|
DMN3018SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 8.5A PWRDI3333-8 |
|
SIB441EDK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 9A PPAK SC75-6 |