MOSFET N-CH 650V 143A ISOTOP
HEATSHRINK FABRIC .47"X200'
Type | Description |
---|---|
Series: | MDmesh™ V |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 143A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15mOhm @ 69A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 414 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 18500 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 679W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | ISOTOP® |
Package / Case: | ISOTOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK7880-55,135Rochester Electronics |
MOSFET N-CH 55V 3.5A SOT223 |
|
STB11NM60FDT4STMicroelectronics |
MOSFET N-CH 600V 11A D2PAK |
|
STF5NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 3.5A TO220FP |
|
STB18NF25STMicroelectronics |
MOSFET N-CH 250V 17A D2PAK |
|
GKI07113Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 9A 8DFN |
|
IRL640PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 17A TO220AB |
|
2SK1934-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN3R4-30BLE,118Nexperia |
MOSFET N-CH 30V 120A D2PAK |
|
SIRA58DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
STW20N95DK5STMicroelectronics |
MOSFET N-CH 950V 18A TO247 |
|
PMZB320UPEYLNexperia |
MOSFET P-CH 30V 1A DFN1006B-3 |
|
NTMFS4C10NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.2A 5DFN |
|
FDN308PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.5A SUPERSOT3 |