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FDN308P

FDN308P

MOSFET P-CH 20V 1.5A SUPERSOT3

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FDN308P

FDN308P

Image is for reference, please contact us to get the real picture

Part No :

FDN308P

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 1.5A SUPERSOT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10718 pieces
Shipped from
HK warehouse
Expected Shipping Date
Aug 22 - Aug 26 2025
PDF
FDN308P PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:125mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:341 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT-3
Package / Case:TO-236-3, SC-59, SOT-23-3
FDN308P is available at GangBo-ic.com, Please review product page below for detailed information, including FDN308P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDN308P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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