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FDN308P

FDN308P

MOSFET P-CH 20V 1.5A SUPERSOT3

FDN308P

FDN308P

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Part No :

FDN308P

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 1.5A SUPERSOT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10718 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
FDN308P PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:125mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:341 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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