MOSFET N-CH 950V 18A TO247
Type | Description |
---|---|
Series: | MDmesh™ DK5 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 950 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 330mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 50.7 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PMZB320UPEYLNexperia |
MOSFET P-CH 30V 1A DFN1006B-3 |
|
NTMFS4C10NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.2A 5DFN |
|
FDN308PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.5A SUPERSOT3 |
|
TK11A45D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 11A TO220SIS |
|
CSD25202W15TTexas Instruments |
MOSFET P-CH 20V 4A 9DSBGA |
|
STL36N55M5STMicroelectronics |
MOSFET N-CH 550V 22.5A 4PWRFLAT |
|
FQD4N25TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 3A DPAK |
|
DMT2004UFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 24V 70A POWERDI3333 |
|
IRFBC30ALPBFVishay / Siliconix |
MOSFET N-CH 600V 3.6A I2PAK |
|
IPD135N08N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 45A TO252-3 |
|
IXFH18N90PWickmann / Littelfuse |
MOSFET N-CH 900V 18A TO247AD |
|
R6076MNZ1C9ROHM Semiconductor |
MOSFET N-CHANNEL 600V 76A TO247 |
|
BTS113AE3064NKSA1Rochester Electronics |
MOSFET N-CH 60V 11.5A TO220AB |