MOSFET N-CH 100V 33A D2PAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 44mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 71 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1960 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 130W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRLHM630TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 21A/40A PQFN |
|
IXTP70N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 70A TO220AB |
|
SI4465ADY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 8SOIC |
|
NTMFS6H800NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 28A/203A 5DFN |
|
SI4410DYPBFRochester Electronics |
MOSFET N-CH 30V 10A 8SO |
|
IXFT140N10PWickmann / Littelfuse |
MOSFET N-CH 100V 140A TO268 |
|
IRF6641TRPBFRochester Electronics |
IRF6641 - 12V-300V N-CHANNEL POW |
|
NVMFS5C404NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 49A/352A 5DFN |
|
RM80N60DFRectron USA |
MOSFET N-CHANNEL 60V 80A 8DFN |
|
BSZ060NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 12A/40A TSDSON |
|
RM2333Rectron USA |
MOSFET P-CHANNEL 12V 6A SOT23 |
|
IXTA76N25TWickmann / Littelfuse |
MOSFET N-CH 250V 76A TO263 |
|
GKI04048Sanken Electric Co., Ltd. |
MOSFET N-CH 40V 14A 8DFN |