MOSFET N-CH 40V 14A 8DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5mOhm @ 35.4A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 650µA |
Gate Charge (Qg) (Max) @ Vgs: | 35.3 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2410 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.1W (Ta), 59W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPP60R250CPXKRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHB15N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 15A TO263 |
|
IXFX64N60PWickmann / Littelfuse |
MOSFET N-CH 600V 64A PLUS247-3 |
|
TK58E06N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 58A TO220 |
|
BSB013NE2LXIXUMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 36A/163A 2WDSON |
|
IRFP4668PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 130A TO247AC |
|
APT30M36LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 300V 84A TO264 |
|
IXFT12N90QWickmann / Littelfuse |
MOSFET N-CH 900V 12A TO268 |
|
FDMS86101Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12.4A/60A 8PQFN |
|
IRF1010ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A D2PAK |
|
RCX450N20ROHM Semiconductor |
MOSFET N-CH 200V 45A TO220FM |
|
MGSF3454XT1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPB60R099C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37.9A D2PAK |