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IRLHM630TRPBF

IRLHM630TRPBF

MOSFET N-CH 30V 21A/40A PQFN

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IRLHM630TRPBF

IRLHM630TRPBF

Image is for reference, please contact us to get the real picture

Part No :

IRLHM630TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 21A/40A PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IRLHM630TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:3170 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.7W (Ta), 37W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (3x3)
Package / Case:8-VQFN Exposed Pad
IRLHM630TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLHM630TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLHM630TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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