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HUF75631S3ST

HUF75631S3ST

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Part No :

HUF75631S3ST

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 33A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11923 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
HUF75631S3ST PDF
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:79 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.22 pF @ 25 V
FET Feature:-
Power Dissipation (Max):120W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF75631S3ST is available at GangBo-ic.com, Please review product page below for detailed information, including HUF75631S3ST price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HUF75631S3ST to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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