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IRFR9N20DTRPBF

IRFR9N20DTRPBF

MOSFET N-CH 200V 9.4A DPAK

IRFR9N20DTRPBF

IRFR9N20DTRPBF

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Part No :

IRFR9N20DTRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 9.4A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
693169 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 07 - Jan 11 2025
PDF
IRFR9N20DTRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 25 V
FET Feature:-
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9N20DTRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFR9N20DTRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFR9N20DTRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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