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IPAN60R800CEXKSA1

IPAN60R800CEXKSA1

MOSFET N-CH 600V 8.4A TO220

WH20-01-500

WH20-01-500

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IPAN60R800CEXKSA1

IPAN60R800CEXKSA1

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Part No :

IPAN60R800CEXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 8.4A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10762 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPAN60R800CEXKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:17.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:373 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):27W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPAN60R800CEXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPAN60R800CEXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPAN60R800CEXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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