







GEN 3 650V 25 M SIC MOSFET
CONN HEADER SMD 22POS 1MM
IC GATE DRVR HALF-BRIDGE 8WDFN
-40 TO 85C, 7050, 25PPM, 2.8V, 1
| Type | Description |
|---|---|
| Series: | C3M™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 97A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 15V |
| Rds On (Max) @ Id, Vgs: | 34mOhm @ 33.5A, 15V |
| Vgs(th) (Max) @ Id: | 3.6V @ 9.22mA |
| Gate Charge (Qg) (Max) @ Vgs: | 108 nC @ 15 V |
| Vgs (Max): | +19V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2980 pF @ 600 V |
| FET Feature: | - |
| Power Dissipation (Max): | 326W (Tc) |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247-3 |
| Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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