MOSFET N-CH 1000V 23A TO264
OC-PA-S-FM-090F100F-001-0240
Type | Description |
---|---|
Series: | * |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 460mOhm @ 11.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 154 nC @ 10 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 4350 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-264 [L] |
Package / Case: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFB4127PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 76A TO220AB |
|
SIHB22N60AE-GE3Vishay / Siliconix |
MOSFET N-CH 600V 20A D2PAK |
|
NVMFS5C406NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 52A/353A 5DFN |
|
IRFR9N20DTRPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 9.4A DPAK |
|
TSM60N750CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 6A TO252 |
|
IRF6712STRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 17A DIRECTFET |
|
IXTY01N100DWickmann / Littelfuse |
MOSFET N-CH 1000V 100MA TO252 |
|
AON7400AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A/40A 8DFN |
|
DMN6068LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 6A TO252-3 |
|
APT10035JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 25A ISOTOP |
|
IPAN60R800CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 8.4A TO220 |
|
RM3400Rectron USA |
MOSFET N-CHANNEL 30V 5.8A SOT23 |
|
TK20A60W5,S5VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO220SIS |