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TPN4R712MD,L1Q

TPN4R712MD,L1Q

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TPN4R712MD,L1Q

TPN4R712MD,L1Q

Image is for reference, please contact us to get the real picture

Part No :

TPN4R712MD,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CH 20V 36A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16602 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 05 - Nov 09 2025
PDF
TPN4R712MD,L1Q PDF
Type Description
Series:U-MOSVI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 10 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN
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